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strong ir fet? IRFS7530-7PPBF hexfet ? power mosfet g d s gate drain source application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 60v r ds(on) typ. 1.15m ? ? max 1.4m ? ? i d (silicon limited) 338a ? i d (package limited) 240a d s g ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature base part number package type standard pack complete part number form quantity IRFS7530-7PPBF d2pak-7pin tube 50 IRFS7530-7PPBF tape and reel left 800 irfs7530trl7pp 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e (m ? ) t j = 25c t j = 125c i d = 100a 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 350 i d , d r a i n c u r r e n t ( a ) limited by package 1 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 downloaded from: http:///
? IRFS7530-7PPBF 2 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 240a. note that current limitations aris ing from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 105h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1575a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j =25c, l= 105h, r g = 50 ? , i as =100a, v gs =10v. absolute maximium rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 338 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 239 i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 240 i dm pulsed drain current ?? 1450 p d @t c = 25c maximum power dissipation 375 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 526 mj e as (tested) single pulse avalanche energy tested value ?? 1000 i ar avalanche current ? see fig 14, 15, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 0.40 c/w ? r ? ja junction-to-ambient ?? CCC 40 ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 33 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC 1.15 1.4 m ?? v gs = 10v, i d = 100a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 250a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 60 v, v gs = 0v CCC CCC 150 v ds = 60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 2.2 CCC ?? CCC 1.4 CCC m ?? v gs = 6.0v, i d = 50a ? downloaded from: http:///
? IRFS7530-7PPBF 3 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 d s g dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 249 CCC CCC s v ds = 10v, i d =100a q g total gate charge CCC 236 354 i d = 100a q gs gate-to-source charge CCC 62 CCC v ds = 30v q gd gate-to-drain charge CCC 73 CCC v gs = 10v q sync total gate charge sync. (qg - qgd) CCC 163 CCC t d(on) turn-on delay time CCC 24 CCC ns v dd = 30v t r rise time CCC 102 CCC i d = 100a t d(off) turn-off delay time CCC 168 CCC r g = 2.7 ?? t f fall time CCC 79 CCC v gs = 10v ? c iss input capacitance CCC 12960 CCC pf ? v gs = 0v c oss output capacitance CCC 1270 CCC v ds = 25v c rss reverse transfer capacitance CCC 760 CCC ? = 1.0mhz c oss eff.(er) effective output capacitance (e nergy related) CCC 1248 CCC v gs = 0v, v ds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 1590 CCC v gs = 0v, v ds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 338 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current CCC CCC 1450 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? CCC 8.5 CCC v/ns t j = 175c,i s =100a,v ds = 60v ? t rr reverse recovery time CCC 48 CCC ns t j = 25c v dd = 51v CCC 50 CCC t j = 125c i f = 100a, q rr reverse recovery charge CCC 72 CCC nc t j = 25c di/dt = 100a/s ??? CCC 83 CCC t j = 125c ? i rrm reverse recovery current CCC 2.5 CCC a t j = 25c ? nc ? downloaded from: http:///
? IRFS7530-7PPBF 4 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 4.0 6.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 50 100 150 200 250 300 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds= 12v i d = 100a downloaded from: http:///
? IRFS7530-7PPBF 5 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 12. typical c oss stored energy fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 10000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 60 70 80 v ( b r ) d s s , d r a in - t o - s o u r c e b r e a k d o w n v o lt a g e ( v ) id = 1.0ma 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 e n e r g y ( j ) 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a in - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) 0 50 100 150 200 i d , drain current (a) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r d s ( o n ) , d r a in - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs = 10v downloaded from: http:///
? IRFS7530-7PPBF 6 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 fig 14. maximum effective transient thermal impedance, junction-to-case fig 15. avalanche current vs. pulse width fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 2400 e a s , s in g le p u ls e a v a la n c h e e n e r g y ( m j ) i d top 21a 44a bottom 100a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. (single pulse) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
? IRFS7530-7PPBF 7 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o ld v o lt a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 4 8 12 16 i r r m ( a ) i f = 60a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 4 8 12 16 i r r m ( a ) i f = 100a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 500 q r r ( n c ) i f = 60a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 500 q r r ( n c ) i f = 100a v r = 51v t j = 25c t j = 125c downloaded from: http:///
? IRFS7530-7PPBF 8 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform downloaded from: http:///
? IRFS7530-7PPBF 9 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 d 2 pak-7pin package outline (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? IRFS7530-7PPBF 10 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 d 2 pak-7pin part marking information d2pak-7pin tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? IRFS7530-7PPBF 11 www.irf.com ? 2013 international rectifier submit datasheet feedback november 27, 2013 ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d 2 pak-7pin msl1 rohs compliant yes downloaded from: http:///

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